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N04M1618L1AB-85I 参数 Datasheet PDF下载

N04M1618L1AB-85I图片预览
型号: N04M1618L1AB-85I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步医疗CMOS SRAM 256Kx16位 [4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 258 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Functional Block Diagram
N04M1618L1A
Address
Inputs
A
0
- A
17
Address
Decode
Logic
256K x 16
Memory
Array
Input/
Output
Mux
and
Buffers
I/O
0
- I/O
7
I/O
8
- I/O
15
CE1
WE
OE
UB
LB
Control
Logic
Functional Description
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
L
H
H
OE
X
X
X
2
L
H
I/O
0
- I/O
7
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
1
Standby
Write
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2