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N04Q1618C2BW-70I 参数 Datasheet PDF下载

N04Q1618C2BW-70I图片预览
型号: N04Q1618C2BW-70I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS瓦特/双Vcc和VCCQ的终极功率降低256K 】 16位POWER SAVER技术 [4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 300 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N04Q16yyC2B
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
CL = 30pF
0 to +70
o
C
Advance Information
Timing
Item
Read Cycle Time
Address Access Time
Page Mode Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
t
RC
t
AA
t
AAP
t
CO
t
OE
t
LB,
t
UB
t
LZ
t
OLZ
t
LBZ,
t
UBZ
t
HZ
t
OHZ
t
LBHZ,
t
UBHZ
t
OH
t
WC
t
CW
t
AW
t
LBW,
t
UBW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
40
0
5
10
5
10
0
0
0
10
70
50
50
50
40
0
0
20
100
0
5
20
20
20
-70
Min.
70
70
35
70
35
70
10
5
10
0
0
0
10
150
120
120
120
100
0
0
20
20
20
20
Max.
Min.
150
150
75
150
75
150
-150
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
7