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NT5DS64M4CT-5T 参数 Datasheet PDF下载

NT5DS64M4CT-5T图片预览
型号: NT5DS64M4CT-5T
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB DDR同步DRAM [256Mb DDR Synchronous DRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 76 页 / 2682 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Block Diagram (64Mb x 4)
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
Control Logic
CKE
CK
CK
CS
WE
CAS
RAS
Command
Decode
Bank1
Row-Address MUX
Bank0
Row-Address Latch
& Decoder
Bank2
Bank3
CK, CK
DLL
Mode
Registers
13
8192
Read Latch
Refresh Counter 13
4
4
MUX
4
DQS
Generator
1
Sense Amplifiers
Bank Control Logic
8192
8
Drivers
15
13
Bank0
Memory
Array
(8192 x 1024 x 8)
Data
Address Register
COL0
I/O Gating
DM Mask Logic
1024
(x8)
Column
Decoder
10
8
8
Write
FIFO
&
Drivers
2
2
8
4
4
4
4
clk clk
out in Data
CK,
CK
COL0
4
11
Column-Address
Counter/Latch
1
COL0
1
Note:
This Functional Block Diagram is intended to facilitate user understanding of the operation of
the device; it does not represent an actual circuit implementation.
Note:
DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-
rectional DQ and DQS signals.
Receivers
A0-A12,
BA0, BA1
2
15
Input
Register
1
Mask 1
1
1
1
DQS
DQ0-DQ3,
DM
DQS
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
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