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Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=0.2A
t
d(on)
t
r
t
d(off)
t
f
Q
g
V
DS
=10V,I
D
=0.3A,
V
GS
=4.5V
V
DD
=30V,I
D
=0.2A
V
GS
=10V,R
GEN
=10Ω
C
lss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,
F=1.0MHz
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=0.2A
V
GS
=10V, I
D
=0.5A
V
DS
=10V,I
D
=0.2A
0.1
1
I
DSS
I
GSS
V
DS
=60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
2N7002K
1
±10
1.5
1.2
1.1
2.5
3
2
μA
uA
V
Ω
Ω
S
21
11
4.2
10
50
17
10
1.7
3
50
25
5
PF
PF
PF
nS
nS
nS
nS
nC
1.3
0.2
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
