2SC4228
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
20
V
V
10
1.5
V
35
mA
mW
˚C
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
150
Tj
150
Tstg
–65 to +150
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
ICBO
IEBO
MIN.
TYP.
MAX.
1.0
UNIT
µA
TEST CONDITIONS
VCB = 10 V, IE = 0
1.0
µA
VEB = 1 V, IC = 0
1
hFE
50
100
8.0
0.3
7.5
1.9
250
VCE = 3 V, IC = 5 mA*
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
fT
5.5
GHz
pF
VCE = 3 V, IC = 5 mA, f = 2 GHz
2
Cre
0.7
3.2
VCB = 3 V, IE = 0, f = 1 MHz*
2
|S21e|
5.5
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
NF
dB
*1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
Rank
Marking
hFE
R43
R43
R44
R44
R45
R45
50 to 100
80 to 160
125 to 250
2
NEC [ NEC ]
