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2SC4228 参数 Datasheet PDF下载

2SC4228图片预览
型号: 2SC4228
PDF下载: 下载PDF文件 查看货源
内容描述: 高频低噪声放大器NPN硅外延晶体管超迷你模具 [HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD]
分类和应用: 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
文件页数/大小: 8 页 / 51 K
品牌: NEC [ NEC ]
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2SC4228
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
P
T
– Total Power Dissipation – mW
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Free Air
200
I
C
– Collector Current – mA
20
15
µ
A
160
A
140
µ
120
µ
A
100
µ
A
80
µ
A
100
10
60
µ
A
5
40
µ
A
I
B
= 20
µ
A
0.5
V
CE
– Collector to Emitter Voltage – V
1.0
0
50
100
150
0
T
A
– Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
V
CE
= 3 V
I
C
– Collector Current – mA
h
FE
– DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 3 V
100
10
50
20
0
0.5
V
BE
– Base to Emitter Voltage – V
1.0
10
0.5
1
5
10
50
I
C
– Collector Current – mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
2.0
1.0
0.5
f
T
– Gain Bandwidth Product – GHz
C
re
– Feed-back Capacitance – pF
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
V
CE
= 3 V
f = 2 GHz
8
6
4
0.2
0.1
2
0
0.5
1
2
5
10
20
50
1
5
10
50
V
CB
– Collector to Base Voltage – V
I
C
– Collector Current – mA
3