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2SC5195-T1 参数 Datasheet PDF下载

2SC5195-T1图片预览
型号: 2SC5195-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 微波低噪声放大器NPN硅外延型晶体管 [MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR]
分类和应用: 晶体放大器晶体管微波
文件页数/大小: 10 页 / 65 K
品牌: NEC [ NEC ]
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2SC5195
3
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 1 V
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
30
Noise Figure NF (dB)
2
f = 2 GHz
20
|S
21e
|
2
MAG
10
1
f = 1 GHz
1
2
3
5
7 10
Collector Current I
C
(mA)
20
0
0.1
0.2
0.5
1
Frequency f (GHz)
5
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
Feed-back Capacitance C
re
(pF)
1.5
0.5
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
1.0
0.1
1
2
5
10
Collector to Base Voltage V
CB
(V)
20
0.5
0.1
0.2
0.5
1
Frequency f (GHz)
2
4