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2SJ462 参数 Datasheet PDF下载

2SJ462图片预览
型号: 2SJ462
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道MOS场效应晶体管高速开关 [P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING]
分类和应用: 晶体开关晶体管场效应晶体管
文件页数/大小: 6 页 / 65 K
品牌: NEC [ NEC ]
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2SJ462
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
–10
1
m
FORWARD BIAS SAFE OPERATING AREA
80
dT - Derating Factor - %
ID - Drain Current - A
10
s
m
s
60
PW
–1
DC
=1
00
m
s
40
20
Single Pulse
0
0
30
60
90
120
150
T
A
- Ambient Temperature - ˚C
–0.1
–1
–10
V
DS
- Drain to Source Voltage - V
–100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–5
–5 V
–10
–4 V
–3 V
I
D
- Drain Current - A
–1
TRANSFER CHARACTERISTICS
V
DS
= –3 V
–4
I
D
- Drain Current - A
–3
–0.1
T
A
= 125 ˚C
T
A
= 75 ˚C
T
A
= 25 ˚C
T
A
= –25 ˚C
–2
–2 V
–0.01
–1
V
GS
= –1 V
0
0
–2
–4
–6
–8
–10
V
DS
- Draint to Source Voltage - V
–0.001
–0.0001
0
–0.5
–1.0
–1.5
–2.0
V
GS
- Gate to Source Voltage - V
–2.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
IyfsI - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-State Resistance -
V
DS
= –3 V
0.6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
= –2.5 V
0.5
0.4
0.3
T
A
= 125 ˚C
75 ˚C
0.2
0.1
0
–0.001
25 ˚C
–25 ˚C
1
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
0.1
0.01
–0.0001
–0.001
–0.01
–0.1
–1
–0.01
–0.1
–1
–10
I
D
- Drain Current - A
I
D
- Drain Current - A
3