DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ559 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital
circuits.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
0.1
+0.1
–0.05
1.6 ± 0.1
0.8 ± 0.1
D
0 to 0.1
G
0.2
0.5
+0.1
–0
FEATURES
•
Can be driven by a 2.5 V power source.
•
Low gate cut-off voltage.
S
0.5
0.6
0.75 ± 0.05
1.0
1.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
V
V
A
A
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
#
20
#
0.1
#
0.4
200
150
–55 to +150
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Gate Protect
Diode
Source
Internal Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2
2.
Mounted on ceramic substrate of 3.0cm
Remark
×
0.64 mm
Marking : C1
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13801EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1999
NEC [ NEC ]
