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2SJ559 参数 Datasheet PDF下载

2SJ559图片预览
型号: 2SJ559
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道MOS场效应晶体管高速开关 [P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING]
分类和应用: 晶体开关小信号场效应晶体管光电二极管
文件页数/大小: 8 页 / 51 K
品牌: NEC [ NEC ]
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2SJ559  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
100  
80  
–100  
–80  
V
GS = –10 V  
GS = –6 V  
GS = –4 V  
V
–60  
60  
V
V
GS = –3 V  
40  
–40  
20  
0
–20  
0
V
GS = –2.5 V  
–4  
0
30  
60  
90  
120  
150  
0
–1  
–2  
–3  
–5  
T
A
- Ambient Temperature - C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
TRANSFER CHARACTERISTICS  
DS = –3 V  
1000  
100  
–100  
V
DS = –3 V  
V
–10  
–1  
T
A
= 125 ˚C  
T
A = 75 ˚C  
T
A
= –25 ˚C  
T
A
A
= 25 ˚C  
T
A = 25 ˚C  
T
= –25 ˚C  
–0.1  
10  
1
TA = 75 ˚C  
–0.01  
T
A
= 125 ˚C  
–0.001  
–0.1  
–1  
–10  
–100  
–1000  
0
–0.8  
–1.6  
–2.4  
–3.2  
–4.0  
ID - Drain Current - mA  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
60  
60  
VGS = –4 V  
V
GS = –2.5 V  
50  
40  
50  
40  
T
A
= 125 ˚C  
T
A = 75 ˚C  
30  
30  
T
A
= 125 ˚C  
T
A = 75 ˚C  
20  
10  
20  
10  
0
T
A
= 25 ˚C  
T
A
= –25 ˚C  
T
A
= 25 ˚C  
= –25 ˚C  
T
A
0
–0.1  
–1  
I
–10  
–100  
–1000  
–0.1  
–1  
I
–10  
–100  
–1000  
D - Drain Current - mA  
D - Drain Current - mA  
3
Data Sheet D13801EJ1V0DS00