2SK2480
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-a)
= 62.5(˚C/W)
10
R
th(ch-c)
= 3.57(˚C/W)
1
0.1
0.01
0.001
10
µ
Single Pulse
T
c
= 25 ˚C
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 20 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
R
DS(on)
- Drain to Source On-State Resistance -
Ω
10
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
10
5
I
D
=
3A
1.5 A
0.6 A
0.1
0.01
0.1
1.0
10
0
10
20
30
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
GS(off)
- Gate to Source Cutoff Voltage - V
8
7
6
5
4
3
2
1
0
1.0
10
I
D
- Drain Current - A
100
Pulsed
V
GS
= 10 V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= 10 V
I
D
= 1 mA
R
DS(on)
- Drain to Source On-State Resistance -
Ω
5
0
–50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
NEC [ NEC ]
