2SK2480
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
SD
- Diode Forward Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
R
DS(on)
- Drain to Source On-State Resistance -
Ω
10
5
1
V
GS
= 10 V
V
GS
= 0 V
0.1
0
0.5
1.0
1.5
0
–50
0
50
100
V
GS
= 10 V
I
D
= 2 A
150
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0
f = 1 MHz
1 000
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
C
iss
100
t
d(off)
t
r
t
d(on)
t
f
10
100
C
oss
10
1.0
10
C
rss
100
1000
1.0
0.1
1.0
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10 000
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/
µ
s
V
GS
= 0
V
GS
- Gate to Source Voltage - V
16
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
I
D
= 3.0 A
14
12
10
8
6
4
2
0
4
8
12
16
20
24
28
V
DD
= 450 V
300 V
150 V
1 000
100
10
0.1
1.0
10
100
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
5
NEC [ NEC ]
