DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3715
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3715 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3715
PACKAGE
Isolated TO-220
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 6.0 mΩ MAX. (V
GS
= 10 V, I
D
= 38 A)
R
DS(on)2
= 9.5 mΩ MAX. (V
GS
= 4 V, I
D
= 38 A)
•
Low C
iss
: C
iss
= 8400 pF TYP.
•
Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±75
±300
40
2.0
150
−55
to +150
67
450
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16378EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002