2SK3715
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
Pulsed
300
FORWARD TRANSFER CHARACTERISTICS
1000
100
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
V
GS
= 10 V
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
4.0 V
I
D
- Drain Current - A
10
1
0.1
0.01
0.001
0
T
ch
= 150°C
85°C
25°C
−55°C
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
T
ch
=
−50°C
25°C
85°C
150°C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 m A
2.5
2
1.5
1
0.5
0
-75 -50 -25
0
25
50
75 100 125 150 175
10
V
DS
= 10 V
Pulsed
1
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
18
16
14
12
10
8
6
4
2
0
1
10
100
10 V
V
GS
= 4.0 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
8
6
I
D
= 38 A
4
2
0
0
10
V
GS
- Gate to Source Voltage - V
1000
20
I
D
- Drain Current - A
4
Data Sheet D16378EJ2V0DS
NEC [ NEC ]
