DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE325S01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE325S01 is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
and another commercial systems.
PACKAGE DIMENSIONS
(Unit: mm)
2.0 ±0.2
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., G
a
= 12.5 dB TYP. at f = 12 GHz
• Gate Length : L
g
≤
0.20
µ
m
• Gate Width : W
g
= 200
µ
m
0
2.
1
.2
±0
0.5 TYP.
ORDERING INFORMATION
PART NUMBER
NE325S01-T1
NE325S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
D
D
3
0.65 TYP.
1.9 ±0.2
1.6
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
100
165
125
–65 to +125
V
V
mA
1.
2.
3.
4.
Source
Drain
Source
Gate
µ
A
mW
˚C
˚C
0.125 ±0.05
0.4MAX
4.0 ±0.2
RECOMMENDED OPERATING CONDITION (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P11138EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan
©
1.5 MAX
2.0 ±0.2
2
1996
NEC [ NEC ]
