NE325S01
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
SYMBOL
I
GSO
I
DSS
V
GS(off)
g
m
NF
G
a
11.0
20
–0.2
45
MIN.
TYP.
0.5
60
–0.7
60
0.45
12.5
0.55
MAX.
10
90
–2.0
UNIT
TEST CONDITIONS
V
GS
= –3 V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
µ
A
V
DS
= 2V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
µ
A
mA
V
mS
dB
dB
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
P
tot
- Total Power Dissipation - mW
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - mA
200
80
V
GS
= 0 V
60
–0.2 V
40
–0.4 V
20
–0.6 V
–0.8 V
150
100
50
0
50
100
150
200
250
0
1.5
V
DS
- Drain to Source Voltage - V
3.0
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
24
V
DS
= 2 V
I
D
- Drain Current - mA
60
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
|S
21s
|
2
- Forward Insertion Gain - dB
20
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
V
DS
= 2 V
I
D
= 10 mA
MSG.
MAG.
40
16
20
12
|S
21S
|
2
0
–2.0
–1.0
V
GS
- Gate to Source Voltage - V
0
8
4
1
2
4
6
8 10
14
20 30
f - Frequency - GHz
2
NEC [ NEC ]
