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2SC3585-T1B 参数 Datasheet PDF下载

2SC3585-T1B图片预览
型号: 2SC3585-T1B
PDF下载: 下载PDF文件 查看货源
内容描述: 微波低噪声放大器NPN硅外延TRANSISOR [MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR]
分类和应用: 晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管
文件页数/大小: 8 页 / 105 K
品牌: NEC [ NEC ]
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2SC3585
噪声系数与
集电极电流
7
6
NF-噪声系数分贝
5
4
3
2
1
0
0.5
V
CE
= 6 V
F = 2.0 GHz的
1
5
10
50 70
I
C
-collector电流毫安
S参数
V
CE
= 6.0 V,I
C
= 3.0毫安,Z
O
= 50

F(兆赫)
200
400
600
800
1000
1200
1400
1600
1800
2000

S
11

0.858
0.724
0.580
0.457
0.362
0.304
0.232
0.179
0.147
0.108

S
11

23.1

40.6

51.1

58.9

65.6

73.1

82.2

84.9

88.2

104.1

S
21

8.499
6.923
5.951
4.615
4.134
3.412
3.180
2.763
2.726
2.378

S
21
153.3
131.6
118.4
104.9
98.0
88.9
82.0
75.7
70.5
64.9

S
12

0.030
0.060
0.080
0.099
0.106
0.129
0.148
0.154
0.188
0.197

S
12
46.5
58.7
60.3
60.2
61.2
61.1
60.1
59.5
58.7
56.8

S
22

0.905
0.826
0.749
0.666
0.614
0.574
0.542
0.514
0.483
0.455

S
22

13.5

21.2

27.0

28.6

30.1

30.0

31.7

35.2

40.1

42.6
V
CE
= 6.0 V,I
C
= 10.0毫安,Z
O
= 50

F(兆赫)
200
400
600
800
1000
1200
1400
1600
1800
2000

S
11

0.613
0.406
0.285
0.214
0.156
0.130
0.105
0.065
0.042
0.018

S
11

37.0

53.6

56.0

57.6

58.1

54.2

56.5

55.0

48.9

65.6

S
21

16.141
10.096
7.640
5.564
4.787
3.876
3.573
3.058
2.997
2.590

S
21
133.9
111.5
101.4
90.7
86.0
79.3
74.0
69.4
65.3
60.7

S
12

0.021
0.053
0.064
0.089
0.095
0.119
0.141
0.158
0.178
0.202

S
12
52.5
70.6
73.0
71.7
70.6
70.3
68.3
68.9
66.5
66.2

S
22

0.781
0.651
0.590
0.548
0.526
0.506
0.489
0.470
0.439
0.426

S
22

19.4

22.4

24.0

22.8

23.3

22.1

24.8

27.9

31.4

36.5
3