SEMICONDUCTOR
10T Series
RoHS
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
10Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 500 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM,
gate open, T
j
= 125°C
Without snubber, T
j
= 125°C
MAX.
MIN.
MIN.
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
35
50
60
500
5.5
1.3
0.2
50
70
mA
80
1000
9
V/µs
A/ms
V
V
mA
MAX.
Unit
CW
35
BW
50
mA
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
10Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 4.4 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/dt
(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
25
40
80
200
5
C
MAX.
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
t0
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 14 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
=
V
RRM
T
j
= 125°C
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
0.85
40
5
UNIT
V
V
mΩ
µA
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
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