SEMICONDUCTOR
10T Series
RoHS
RoHS
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P(W)
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
12
11
10
9
8
7
6
5
4
3
2
1
0
TO-220AB
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TO-220AB
insulated
I T(RMS) (A)
T c (°C)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
Fig.3 Relative variation of thermal impedance
versus pulse duration
K=[Z th
/R
th
]
1E+0
Zth
(
j
-
c
)
Fig.4 On-state characteristics (maximum values)
I
TM
(A)
100
T j max
V to =0.85V
R d =40mΩ
T j =T j max
Zth
(
j
-
a
)
1E-1
10
T j =25°C
t
p
(s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1
0.5
1.0
1.5
2.0
V TM (V)
2.5
3.0
3.5
4.0
4.5
5.0
Fig.5 Surge peak on-state current versus number
of cycles
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l 2 t
I
TSM
(A),
I t
(A
s)
1000
Tj initial=25°C
2
2
I
TSM
(A)
110
100
90
80
70
60
50
40
30
20
10
0
1
10
Repetitive
T c =95°C
t=20ms
Non repetitive
T j initial=25°C
One cycle
dl/dt limitation
50A/µs
I TSM
100
l²t
Number of cycles
10
t p (ms)
100
1000
0.01
0.10
1.00
10.00
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