SEMICONDUCTOR
16T Series
RoHS
RoHS
Fig.1 Maximum power dissipation versus
on-state rms current (full cycle)
Fig.2 On-state rms current versus case
temperature (full cycle)
I
T(RMS)
(A)
18
16
14
12
10
8
6
4
TO-220AB
insulated
TO-263AB
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
IT
(RMS)
(A)
8
10
12
14
16
2
0
0
T
C
(°C)
25
50
75
100
125
Fig.3 On-state current versus ambient
temperature (full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Zth
/R
th
]
1E+0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
T(RMS)
(A)
printed circuit board Fr4, copper thickness:35 µm
D²PAK
(S=1cm²)
Zth(j-c)
Zth(j-a)
1E-1
Tc(°c)
0
25
50
75
100
125
1E-2
1E-3
tp(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 On-state characteristics (maximum values)
Fig.6 surge peak on- state current versus
number of cycles
200
100
I
TM
(A)
Tj max.
Vto=0.85V
Rd=25mΩ
180
160
140
120
T
j
=25°c
I
TSM
(A)
t=20ms
T
j
=T
j
max.
Non repetitive
Tjinitial=25°C
One cycle
100
80
60
40
Repetitive
Tc=85°C
10
1
0.5
1.0
1.5
2.0
V
TM
(V)
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Number of cycles
100
1000
www.nellsemi.com
Page 5 of 7
NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
