SEMICONDUCTOR
16T Series
RoHS
RoHS
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
Fig.8 Relative variation of gate trigger current
I
TSM
(A), I²t(A²S)
3000
dl/dt limitation:
50A/µs
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
= 25°C]
Tj initial=25°C
2.5
2.0
holding current and latching current versus junction
temperature (typical values)
1000
lTSM
I
GT
1.5
1.0
0.5
IH&IL
100
pulse with width t
p
<10ms and
corresponding value of l²t
l²t
T
j
(°C)
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
0.01
0.10
1.00
tp(ms)
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.0
snubberless and Logic level types
6
5
4
(dI/dt)c [T ] / (dI/dt)c [T
j
s pecified]
j
standard types
1.8
1.6
SW
C
B
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1.0
CW/BW
3
2
1
(dV/dt)c (V/µs)
10.0
100.0
T
j
(°C)
0
0
25
50
75
100
125
Fig.11 D²PAK thermal resistance junction to ambient versus
copper surface under tab (printed circuit FR4, copper
thickness: 35µm
R
th
(j-a)(°C/W)
80
70
60
50
D²PAK
40
30
20
10
0
0
4
8
12
16
S(cm²)
20
24
28
32
36
40
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