SEMICONDUCTOR
RoHS
30PT Series
RoHS
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 33Ω
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
Min.
Max.
Max.
30PTxxxx
4
mA
50
1.3
0.2
75
40
500
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
250
Max.
Max.
Max.
Max.
Max.
1.6
5
2
1.27
12
V
µA
mA
V
mΩ
V/µs
V
V
mA
mA
Unit
V
D
= V
DRM
, R
L
= 3.3K
Ω,
R
GK
= 220
Ω
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 60A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
Threshold Voltage
Dynamic Resistance
V
DRM
≤
800V
V
DRM
≥
1000V
T
j
= 125°C
Min.
Max.
Typ.
THERMAL RESISTANCE
SYMBOL
Parameter
D
2
PAK/TO-220AB/TO-3P/TO-247AB
R
th(j-c)
Junction to case
(DC)
TO-3P insulated
TO-220AB insulated
S = 1 cm
2
R
th(j-a)
Junction to ambient
TO-263( D
2
PAK)
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
S=Copper surface under tab
VALUE
1.0
1.2
2.0
45
60
50
°C/W
°C/W
UNIT
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
30PTxxA/30PTxxAl
30PTxxH
30PTxxB/30PTxxBI
30PTxxC
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
1200
V
V
V
V
V
1600
V
V
V
V
V
50
mA
50
mA
50
mA
50
mA
TO-220AB
D
2
PAK
TO-3P
TO-247AB
SENSITIVITY
PACKAGE
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