SEMICONDUCTOR
4PT Series
Fig.10 Non-repetitive surge peak on-state
current, and corresponding values
of l²t
I
TSM
(A),I²t(A²s)
300
Tj inital=25
°
C
RoHS
RoHS
Fig.9 Surge peak on-state current versus
number of ctcles
35
30
I
TSM
(A)
tp=10ms
dI/dt Iimitation
100
I
TSM
25
20
15
10
5
0
1
10
Repetitive
Tc=115°C
Non repetitive
Tj inital=25°C
One cycle
10
I²t
Sinusoidal pulse with
width < 10ms
Number of cycles
100
1000
1
0.01
0.10
t p (ms)
1.00
10.00
Fig.11 On-state characteristics (maximum
values)
Fig.12 Thermal resistance junction to ambient
versus copper surface under tab (DPAK)
R
th
(j-a)(
°
C/W)
100
80
60
40
20
Epoxy printed circuit board FR4
copper thickness = 35µm
50.0
I
TM
(A)
Tjmax
V
t0
=0.85V
Rd=90mΩ
10.0
Tj=max
1.0
Tj=25
°
C
RoHS
S(cm²)
0
2
4
6
8
10
12
14
16
18
20
0
0.1
0.0
0.5
1.0
1.5
V
TM
(V)
0
2.0
2.5
3.0
3.5
4.0
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