SEMICONDUCTOR
RoHS
4T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
4Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 200 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
15
MIN.
20
1.8
0.9
-
TEST CONDITIONS
QUADRANT
TW
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
10
10
1.3
0.2
15
25
30
40
2.7
2.0
-
35
50
mA
60
400
-
-
2.5
A/ms
V/µs
V
V
mA
MAX.
05
SW
10
CW
35
mA
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
4Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 200 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 1.7 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
5
10
15
5
0.5
10
10
20
5
1
T
5
MAX.
5
D
5
10
1.3
0.2
10
15
25
10
2
25
25
40
50
V/µs
5
mA
S
10
10
A
10
25
mA
V
V
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
TO(2)
R
D(2)
I
DRM
I
RRM
I
TM
= 5.5 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
V
0.85
100
5
mΩ
µA
UNIT
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
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