SEMICONDUCTOR
RoHS
4T Series
RoHS
Fig.6 Surge peak on-state current versus number
of cycles.
ITSM
(A)
40
Tj
=25°C
Fig.5 On-state characteristics (maximum values).
ITM
(A)
100
35
Tj
=125°C
30
25
10
T
j
max.
:
Vto
= 0.85
V
Rd
= 100
mW
VTM(V)
Non repetitive
T
j
initial=25°C
t=20ms
One cycle
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
1
Repetitive
Tc
=100°C
Number of cycles
1
10
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
lTSM (A), l
2
t(A
2
s)
1000
T
j
initial=25°C
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l
GT
,l
H
,l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
100
dI/dt limitation:
50A/µs
IGT
ITSM
1.5
IH
&
IL
1.0
10
I
2
t
0.5
T j (°C)
tp(ms)
1
0.01
0.0
-40
1.00
10.00
-20
0
20
40
60
80
100
120
140
0.10
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Fig.10 Relative variation of critical rate of decrease
of main current versus junction temperature
(dl/dt)c [T
j
] / (dl/dt)c [T
j
specified]
6
5
4
A
3
2
1
D
T
(dV/dt)c (V/µs)
S
T j (°C)
0
10.0
100.0
0
25
50
75
100
125
1.0
Fig.11 DPAK thermal resistance junction to
ambient versus copper surface under
tab (priented circuit board Fr4, copper
thickness:35 µm)
100
90
80
70
60
50
40
30
20
10
0
R
th(j-a)
°(C/W)
S(cm
2
)
0
4
8
12
16
20
24
28
32
36
40
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