SEMICONDUCTOR
6PT Series
RoHS
RoHS
Fig.3 Average on-state current versus case
temperature
7
6
5
4
3
2
1
0
0
10
20
30
40
50
TO-251/TO-252
TO-220AB
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
1
I
T
(AV)(A)
DC
Z th(j-c)
TO-220AB
Insulated
α=180°
0.1
Z th(j-a)
T case (°C)
60
70
80
90 100 110 120 130
0.01
1E-3
t p (s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Fig.5 Relative variation of gate trigger current
versus junction temperature
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25 C]
2.5
2
1.5
80
70
60
50
Fig.6 Surge peak on-state current versus number
of cycles
I
T(AV)
(A)
tp=10ms
One cycle
I
GT
1
0.5
40
30
20
Tj inital=25°C
I
H
&I
L
T j (°C)
0
-40 -30 -20 -10
0 10 20 30 40 50 60 70 80 90 100 110
10
0
1
10
Number of cycles
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms,
Fig.8 On-state characteristics (maximum values)
and corresponding values of
l²t
I
TSM
(A),I²t(A²s)
Tj inital=25 C
Tj=max
100
I
TM
(A)
I
TSM
100
10
Tj=25°C
I²t
Tjmax
V
t0
=0.1V
Rd=46mΩ
10
1
2
t p (ms)
5
10
1
1
2
3
V
TM
(V)
4
5
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