SEMICONDUCTOR
RoHS
85FD(R)Series
RoHS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
I
F(RMS)
I
FRM
TEST CONDITIONS
180° conduction, half sine wave
85FD(R)
85
85
133
UNIT
A
ºC
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
A
A
Sinusoidal half wave, 30°
conduction
t
= 10ms
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
t
= 8.3ms
Sinusoidal half wave, 100% V
RRM
reapplied, initial T
J
=T
J
maximum
Sinusoidal half wave, no voltage
reapplied, initial T
J
=T
J
maximum
100% V
RRM
reapplied,
initial T
J
=T
J
maximum
no voltage reapplied,
initial T
J
=T
J
maximum
470
1100
1151
1308
1369
6050
5498
8554
7778
85543
1.128
2.11
I
FSM
A
Maximum l²t for fusing
I
2
t
t
= 10ms
t
= 8.3ms
A
2
s
Maximum l²√t for fusing
(1)
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
Note :
(1)
l
2
t for time t
x
=1
2
√
t
√t
x
I
2
√t
V
F(TO)
r
F
t = 0.1 ms to 10 ms, no voltage reapplied
A
2
√
s
T
J
= 125°C
T
J
= 25°C; l
FM
= 265A
V
mΩ
V
V
FM
1.75
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25°C, I
F
= 1A, I
R
= 1.0A,
I
RR
= 250mA (RG#1 CKT)
Typical reverse recovery time
t
rr
T
J
= 25°C, I
F
= 1A to V
R
= 30V ,
-dl
F
/dt = 100 A/µs
T
J
= 25°C, -dl
F
/dt = 25 A/µs,
l
FM
=
π
x rated l
F(AV)
T
J
= 25°C, I
F
= 1A to V
R
= 30V,
-dl
F
/dt = 100 A/µs
T
J
= 25°C, -dl
F
/dt = 25 A/µs,
l
FM
=
π
x rated l
F(AV)
85FD(R)
02 to 06
200
08 to 12
500
UNIT
50
120
ns
200
70
500
340
Typical reverse recovered charge
Q
rr
nC
240
1300
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