SEMICONDUCTOR
RoHS
85FD(R)Series
RoHS
N
ell
High Power Products
Fig.5 Average forward current vs. maximum
allowable case temperature.
Maximum allowable case temperature (˚C)
125
85FD(R)Series
Fig .6 Typical reverse recovery time vs.
rate of fall of forward current.
10
4
85FD(R), 200 to 600V
110
100
90
80
70
60
50
40
0
ø =180°
120°
90°
60°
30°
ø =180°
120°
60°
30°
Reverse recovery time (ns)
400
T
J
= 125°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
10
2
T
J
= 25°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
DC
40
10
20
40
60
80
100
120
140
1
Average forward current (A)
4
10
40
100
Rate of fall of forward current (A/µs)
Fig .7 Typical recovered charge vs.
rate of fall of forward current.
10
4
85FD(R), 200 to 600V
Fig .8 Typical reverse recovery time vs.
rate of fall of forward current.
5000
85FD(R), 800 to 1200V
Recovered charge (nC)
10
3
Reverse recovery time (ns)
4000
T
J
= 125°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
l
F
= 265A
l
F
= 50A
l
F
= 1A
10
2
=
12
5°
C
1000
T
J
10
T
J
5
=2
°C
400
300
200
T
J
= 25°C
l
F
= 265A
l
F
= 50A
l
F
= 1A
1
1
4
10
40
100
100
1
4
10
40
100
Rate of fall of forward current (A/µs)
Rate of fall of forward current (A/µs)
Fig .9 Typical recovered charge vs.
rate of fall of forward current.
10
5
85FD(R), 800 to 1200V
Recovered charge (nC)
10
4
l
F
= 265A
l
F
= 50A
l
F
= 1A
10
3
T
J
=1
25
°C
10
2
T
J
=2
5°
C
10
1
4
10
40
100
Rate of fall of forward current (A/µs)
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