SEMICONDUCTOR
8PT Series
RoHS
RoHS
Fig.1 Maximum average power dissipation versus
average on-state current
P(W)
8
7
6
5
4
3
360°
α=180°
10
9
8
7
6
5
4
3
2
1
0
6
Fig.2 Average and DC on-state current versus
case temperature
I
T(AV)
(A)
DPAK IPAK
DC
TO-220AB
α=180°
TO-220AB
Insulated
2
1
0
0
1
2
α
I
T(AV)
(A)
3
4
5
T case (°C)
0
25
50
75
100
125
Fig.3 Average and DC on-state current versus
ambient temperature
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
DPAK
IPAK
Fig.4 Relative variation of thermal impedance
junction to case versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
I
T
(AV)(A)
DC
α=180°
Recommended pad layout
Fr4 printed circuit board
1.0
TO-220AB
TO-220AB Insulated
0.5
0.2
T amb (°C)
75
100
125
0.1
1E+3
t p (s)
1E+2
1E+1
1E+0
Fig.5 Relative variation of thermal impedance
junction to ambient versus pulse duration
K=[Zth(j-a)/Rth(j-a)]
1.00
Recommended pad layout,
FR4 printed circuit board
Fig.6 Relative variation of gate trigger current
and holding current versus junction
temperature for I
GT
=200
µ
A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25
°
C]
I
GT
DPAK
0.10
TO-220AB
TO-220AB Insulated
l
H
& I
L
R
GK
=1K
0.01
1E-2
t p (s)
1E-1
1E+0
1E+1
1E+2
5E+2
T j (°C)
-20
0
20
40
60
80
100
120
140
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