SEMICONDUCTOR
NKT26A/NKH26A Series
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
08
NKT26..A
NKH26..A
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
8
I
RRM
/I
DRM
AT
125 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
l
T(RMS)
I
TSM
TEST CONDITIONS
180°
conduction, half sine wave ,50Hz
180°
conduction, half sine wave ,50Hz ,T
C
= 85°C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUE
27
85
60
520
UNITS
A
°C
A
No voltage
reapplied
546
Sine half wave,
initial T
J
=
T
J
maximum
1.35
1.23
0.95
0.86
13.5
1.6
V
1.3
150
400
mA
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
I
TM
=80A ,
T
J
= 25 °C, 180°
conduction
I
FM
=80A ,
T
J
= 25 °C, 180°
conduction
Anode supply
= 6
V,resistive load T
= 25 °C
,
J
Anode supply
= 6
V resistive load, T
= 25 °C
J
V
TM
V
FM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
I
DRM
V
ISO
dV/dt
T
J
= 125 °C
50
Hz, circuit to base,
all terminals shorted
T
J
=
T
J
maximum,
exponential to
67 %
rated V
DRM
TEST CONDITIONS
VALUES
8
2500 (1min)
3000 (1s)
500
UNITS
mA
V
V/μs
www.nellsemi.com
Page 2 of 4
NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
