SEMICONDUCTOR
NKT26A/NKH26A Series
RoHS
RoHS
N
ell
High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
-
V
GT
V
GT
T
J
= 25 °C
I
GT
V
GD
T
J
=
T
J
maximum, 66.7% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/μs
Anode supply
= 6
V,
resistive load; R
a
= 1
Ω
20~100
mA
V
t
p
≤
5
ms, T
J
=
T
J
maximum
TEST CONDITIONS
t
p
≤
5
ms, T
J
=
T
J
maximum
f
= 50
Hz, T
J
=
T
J
maximum
VALUES
10
3
3
10
V
0.7~1.5
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth
,
flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3
hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40
to
125
°C
- 40
to
150
0.7
°C/W
0.19
UNITS
AAP to heatsink, M6
Mounting
torque
± 10 %
busbar to AAP, M5
4
N.m
120
Approximate weight
4.23
Case style
ADD-A-PAK
g
oz.
ORDERING INFORMATION TABLE
Device code
NK
T
26
/
16
A
1
1
2
3
4
5
-
-
-
-
-
2
3
4
5
Module type
Circuit configuration
Current rating: I
T(AV)
Voltage code x
100 =
V
RRM
Assembly type,”A” for soldering type
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