PD10M440L/441L, P2H10M440L/441L
.
Fig.1- Output Characteristics
(Typical)
120
Fig.2- Drain to Source On Voltage
vs. Gate to Source Voltage
(Typical)
T
C
=25℃
12
250μs PULSE TEST
V
GE
=10V
6V
T
C
=25℃
250μs PULSE TEST
80
Drain to Source Voltage V
DS
(V)
100
10
DrainCurrent I
D
(A)
8
I
D
=85A
60
6
40
5V
4
I
D
=40A
2
20
I
D
=20A
0
0
2
4
6
8
4V
0
10
12
0
2
4
6
8
10
12
14
16
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Fig.3- Drain to Source On Voltage
vs. Junction Temperature
(Typical)
20
Fig.4- Capacitance vs. Drain to Source Voltage
(Typical)
30
V
GS
=10V
250μs PULSE TEST
V
GS
=0V
f=1MH
Z
T
C
=25℃
24
Drain to Source Voltage V
DS
(V)
16
12
Capacitance C
(nF)
I
D
=85A
18
Ciss
8
I
D
=40A
12
Coss
6
4
I
D
=20A
Crss
0
-40
0
40
80
120
160
0
1
3
10
30
100
Junction Temperature Tj
(℃)
Drain to Source Voltage V
DS
(V)
Fig.5- Gate Charge vs. Gate to Source Voltage
(Typical)
16
Fig.6- Series Gate Impedance vs. Switching Time
(Typical)
10
I
D
=50A
V
DD
=100V
14
V
DD
=250V
Gate to Source Voltage V
GS
(V)
V
DD
=250V
I
D
=40A
T
C
=25℃
80μs Pulse Test
10
8
6
4
2
0
0
100
200
300
400
500
600
Switching Time t
(μs)
12
V
DD
=400V
3
1
0.3
toff
ton
0.1
1
2
5
10
20
50
100
200
Total Gate Charge Qg
(nC)
Series Gate Impedance R
G
(Ω)
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
