PD10M440L/441L,P2H10M440L/441L
Fig.7- Drain Current vs. Switching Time
(Typical)
1000
Fig.8- Source to Drain Diode
Forward Characteristics
(Typical)
120
250μs PULSE TEST
td(off)
100
Switching Time t
(μs)
Source Current I
S
(A)
300
80
td(on)
100
T
J
=125℃
60
t
r
tf
T
J
=25℃
40
30
V
DD
=250V
R
G
=7Ω
T
C
=25℃
80μs Pulse Test
2
3
10
30
100
200
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain Current I
D
(A)
Source to Drain Voltage V
SD
(V)
.
2000
Fig.9- Reverse Recovery Characteristics
(Typical)
500
Fig.10- Maximum Safe Operating Area
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
trr
1000
200
100
500
10μs
Drain Current I
D
(A)
50
100μs
200
20
10
Operation in this area
is limited by R
DS(on)
1ms
100
I
RrM
5
2
10ms
50
…I
S
=40A
―
I
S
=70A
T
J
=150℃
20
0
100
200
300
400
500
600
1
0.5
1
T
C=
25℃
Tj=150℃MAX
Single Pulse
3
10
30
100
DC
441L
440L
300
1000
-dis/dt
(A/μs)
.
.
Drain to Source Voltage V
DS
(V)
Fig.11- Normalized Transient Thermal Impedance
(MOSFET)
Normalized Transient
Thermal Impedance
[
rth
(J-C)/
Rth
(J-C) ]
1x10
1
3
1
3x10
-1
1x10
-1
3x10
-2
1x10
-2
10
-5
Per Unit Base
R
th(j-c)
= 0.25℃/W
1 Shot Pulse
10
-4
10
-3
10
-2
10
-1
1
10
1
PULSE DURATION t
(s)
NIEC [ NIHON INTER ELECTRONICS CORPORATION ]
