Electrical Characteristics:
(T
C
= +25°C unless otherwise noted.)
Parameter
Peak Forward Blocking Voltage, (T
J
= +125°C)
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
Peak Forward or Reverse Blocking Current,
(Rated V
DRM
or V
RRM
)
T
J
= +25°C
T
J
= +125°C
Forward “ON” Voltage, (I
TM
= 50A, Note 2)
Gate Trigger Current (Continuous DC),
(Anode Voltage = 12Vdc, R
L
= 100Ω)
T
C
= +25°C
T
C
= –40°C
Symbol
V
DRM
50
200
400
600
800
I
DRM
, I
RRM
–
–
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
t
q
–
–
dv/dt
–
15
35
50
–
–
–
V/µs
–
–
–
–
0.2
–
–
–
–
–
–
25
1
–
35
1.5
10
2
1.8
40
75
1.5
–
40
2
–
–
–
–
–
–
–
–
–
–
µA
mA
V
mA
V
V
mA
µs
µs
Min
Typ Max Unit
V
Gate Trigger Voltage (Continuous DC)
(Anode Voltage = 12Vdc, R
L
= 100Ω, T
C
= –40°C)
Gate Non–Trigger Voltage
(Anode Voltage = Rated V
DRM
, R
L
=100Ω, T
J
= +125°C)
Holding Current
(Anode Voltage = 12Vdc, T
C
= –40°C)
Turn–On Time
(I
TM
= 25A, I
GT
= 50mAdc)
Turn–Off Time (V
DRM
= rated voltage)
(I
TM
=25A, I
R
= 25A)
(I
TM
=25A, I
R
= 25A, T
J
= +125°C)
Critical Rate of Rise of Off–State Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
Note 2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
.100 (2.54)
Gate
Anode/Tab
NTE [ NTE ELECTRONICS ]
