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M25P05-AVMN6G 参数 Datasheet PDF下载

M25P05-AVMN6G图片预览
型号: M25P05-AVMN6G
PDF下载: 下载PDF文件 查看货源
内容描述: 512千位,串行闪存, 50MHz的SPI总线接口 [512 Kbit, serial Flash memory, 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 52 页 / 1092 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P05-A
Instructions
6.10
Bulk erase (BE)
The bulk erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a write
enable (WREN) instruction must previously have been executed. After the write enable
(WREN) instruction has been decoded, the device sets the write enable latch (WEL).
The bulk erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the bulk erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed bulk erase cycle (whose duration is t
BE
) is initiated. While the
bulk erase cycle is in progress, the status register may be read to check the value of the
write in progress (WIP) bit. The write in progress (WIP) bit is 1 during the self-timed bulk
erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the write enable latch (WEL) bit is reset.
The bulk erase (BE) instruction is executed only if both block protect (BP1, BP0) bits are 0.
The bulk erase (BE) instruction is ignored if one, or more, sectors are protected.
Figure 16. Bulk erase (BE) instruction sequence
S
0
C
Instruction
D
1
2
3
4
5
6
7
AI03752D
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