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M29W064FB70N3F 参数 Datasheet PDF下载

M29W064FB70N3F图片预览
型号: M29W064FB70N3F
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8兆比特×8或4兆位×16 ,网页,引导块) 3 V电源闪存 [64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 69 页 / 1265 K
品牌: NUMONYX [ NUMONYX B.V ]
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Signal descriptions
M29W064FT, M29W064FB
2
Signal descriptions
See
and
for a brief overview of the signals
connected to this device.
2.1
Address inputs (A0-A21)
The address inputs select the cells in the memory array to access during bus read
operations. During bus write operations they control the commands sent to the command
interface of the program/erase controller.
2.2
Data inputs/outputs (DQ0-DQ7)
The data I/O outputs the data stored at the selected address during a bus read operation.
During bus write operations they represent the commands sent to the command interface of
the program/erase controller.
2.3
Data inputs/outputs (DQ8-DQ14)
The data I/O outputs the data stored at the selected address during a bus read operation
when BYTE is High, V
IH
. When BYTE is Low, V
IL
, these pins are not used and are high
impedance. During bus write operations the command register does not use these bits.
When reading the status register these bits should be ignored.
2.4
Data input/output or address input (DQ15A–1)
When BYTE is High, V
IH
, this pin behaves as a data input/output pin (as DQ8-DQ14). When
BYTE is Low, V
IL
, this pin behaves as an address pin; DQ15A–1 Low will select the LSB of
the addressed word, DQ15A–1 High will select the MSB. Throughout the text consider
references to the Data input/output to include this pin when BYTE is High and references to
the address inputs to include this pin when BYTE is Low except when stated explicitly
otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing bus read and bus write operations to be
performed. When Chip Enable is High, V
IH
, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the bus read operation of the memory.
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