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M29W064FB70N3F 参数 Datasheet PDF下载

M29W064FB70N3F图片预览
型号: M29W064FB70N3F
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8兆比特×8或4兆位×16 ,网页,引导块) 3 V电源闪存 [64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 69 页 / 1265 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W064FT, M29W064FB
Signal descriptions
2.12
V
CC
supply voltage (2.7 V to 3.6 V)
V
CC
provides the power supply for all operations (read, program and erase).
The command interface is disabled when the V
CC
supply voltage is less than the lockout
voltage, V
LKO
. This prevents bus write operations from accidentally damaging the data
during power-up, power-down and power surges. If the program/erase controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1 µF capacitor should be connected between the V
CC
supply voltage pin and the V
SS
ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during program and erase operations, I
CC3
.
2.13
V
SS
ground
V
SS
is the reference for all voltage measurements. The device features two V
SS
pins which
must be both connected to the system ground.
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