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M29W064FB70N3F 参数 Datasheet PDF下载

M29W064FB70N3F图片预览
型号: M29W064FB70N3F
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8兆比特×8或4兆位×16 ,网页,引导块) 3 V电源闪存 [64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 69 页 / 1265 K
品牌: NUMONYX [ NUMONYX B.V ]
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Common Flash interface (CFI)
Table 23.
Address
Data
x 16
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
x8
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
0051h
0052h Query unique ASCII string ‘QRY’
0059h
Description
M29W064FT, M29W064FB
CFI query identification string
(1)
Value
‘Q’
‘R’
‘Y’
AMD
compatible
P = 40h
0002h Primary algorithm command set and control interface ID code
0000h 16-bit ID code defining a specific algorithm
0040h Address for primary algorithm extended query table (see
0000h
0000h Alternate vendor command set and control interface ID code
0000h second vendor - specified algorithm supported
0000h
Address for alternate algorithm extended query table
0000h
NA
NA
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 24.
Address
CFI query system interface information
Data
Description
Value
x 16
x8
V
CC
logic supply minimum program/erase voltage
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
CC
logic supply maximum program/erase voltage
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
PP
[programming] supply minimum program/erase voltage
00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Bh
36h
2.7 V
1Ch
38h
3.6 V
1Dh 3Ah
11.5 V
V
PP
[programming] supply maximum program/erase voltage
1Eh 3Ch 00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
20h
21h
22h
23h
24h
25h
26h
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0004h Typical timeout per single byte/word program = 2
n
µs
0000h Typical timeout for minimum size write buffer program = 2
n
µs
000Ah Typical timeout per individual block erase = 2
n
ms
0000h Typical timeout for full chip erase = 2
n
ms
0004h Maximum timeout for byte/word program = 2
n
times typical
0000h Maximum timeout for write buffer program = 2
n
times typical
0003h Maximum timeout per individual block erase = 2
n
times typical
0000h Maximum timeout for chip erase = 2
n
times typical
12.5 V
16 µs
NA
1s
NA
256 µs
NA
8s
NA
56/69