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M29W064FB70N3F 参数 Datasheet PDF下载

M29W064FB70N3F图片预览
型号: M29W064FB70N3F
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8兆比特×8或4兆位×16 ,网页,引导块) 3 V电源闪存 [64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 69 页 / 1265 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W064FT, M29W064FB
Table 25.
Address
Data
x 16
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
x8
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
0017h Device size = 2
n
in number of bytes
Description
Common Flash interface (CFI)
Device geometry definition
(1)
Value
8 Mbytes
x 8, x 16
Async.
16 bytes
2
8
8 Kbytes
127
64 Kbytes
0002h
Flash device interface code description
0000h
0004h
Maximum number of bytes in multi-byte program or page = 2
n
0000h
0002h
Number of erase block regions. It specifies the number of
regions containing contiguous erase blocks of the same size.
0007h Region 1 information
0000h Number of erase blocks of identical size = 0007h+1
0020h Region 1 information
0000h Block size in region 1 = 0020h * 256 byte
007Eh Region 2 information
0000h Number of erase blocks of identical size= 007Eh+1
0000h Region 2 information
0001h Block size in region 2 = 0100h * 256 byte
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Region 3 information
Number of erase blocks of identical size=007Fh+1
Region 3 information
Block size in region 3 = 0000h * 256 bytes
Region 4 information
Number of erase blocks of identical size=007Fh+1
Region 4 information
Block size in region 4 = 0000h * 256 bytes
0
0
0
0
1. For bottom boot devices, erase block region 1 is located from address 000000h to 007FFFh and erase
block region 2 from address 008000h to 3FFFFFh.
For top boot devices, erase block region 1 is located from address 000000h to 3F7FFFh and erase block
region 2 from address 3F8000h to 3FFFFFh.
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