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M29W800DB45M6E 参数 Datasheet PDF下载

M29W800DB45M6E图片预览
型号: M29W800DB45M6E
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1兆位×8或512千位×16 ,引导块) 3 V电源快闪记忆体 [8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory]
分类和应用:
文件页数/大小: 52 页 / 1105 K
品牌: NUMONYX [ NUMONYX B.V ]
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Command interface
Table 5.
Commands, 8-bit mode, BYTE = V
IL(1)
Bus write operations
Length
Command
1st
2nd
3rd
4th
M29W800DT, M29W800DB
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
1
Read/Reset
3
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
3
4
3
2
2
6
6+
1
1
1
AAA
AAA
AAA
AAA
X
X
AAA
AAA
X
X
AA
AA
AA
AA
AA
A0
90
AA
AA
B0
30
98
555
555
555
555
PA
X
555
555
55
55
55
55
PD
00
55
55
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
BA
10
30
X
AAA
AAA
AAA
F0
90
A0
20
PA
PD
X
F0
1. X don’t care, PA program address, PD program data, BA any address in the block.
All values in the table are in hexadecimal.
The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15
are don’t care. DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Table 6.
Program, erase times and program, erase endurance cycles
Parameter
Min.
Typ.
(1)(2)
12
0.8
15
10
12
6
100,000
20
Max.
60
(3)
6
(4)
25
200
60
30
Unit
s
s
µs
µs
s
s
cycles
years
Chip erase
Block erase (64 Kbytes)
Erase suspend latency time
Program (byte or word)
Chip program (byte by byte)
Chip program (word by word)
Program/erase cycles (per block)
Data retention
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
CC
after 100,000 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and V
CC
.
22/52