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M29W800DB45ZE1F 参数 Datasheet PDF下载

M29W800DB45ZE1F图片预览
型号: M29W800DB45ZE1F
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1兆位×8或512千位×16 ,引导块) 3 V电源快闪记忆体 [8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 52 页 / 1105 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W800DT, M29W800DB  
Command interface  
4.7  
Chip Erase command  
The Chip Erase command can be used to erase the entire chip. Six bus write operations are  
required to issue the Chip Erase command and start the program/erase controller.  
If any blocks are protected then these are ignored and all the other blocks are erased. If all  
of the blocks are protected the chip erase operation appears to start but will terminate within  
about 100 µs, leaving the data unchanged. No error condition is given when protected  
blocks are ignored.  
During the erase operation the memory will ignore all commands. It is not possible to issue  
any command to abort the operation. Typical chip erase times are given in Table 6: Program,  
erase times and program, erase endurance cycles. All bus read operations during the chip  
erase operation will output the status register on the data inputs/outputs. See the Section 5:  
Status register for more details.  
After the chip erase operation has completed the memory will return to the read mode,  
unless an error has occurred. When an error occurs the memory will continue to output the  
status register. A Read/Reset command must be issued to reset the error condition and  
return to read mode.  
The Chip Erase command sets all of the bits in unprotected blocks of the memory to ’1’. All  
previous data is lost.  
4.8  
Block Erase command  
The Block Erase command can be used to erase a list of one or more blocks. Six bus write  
operations are required to select the first block in the list. Each additional block in the list can  
be selected by repeating the sixth bus write operation using the address of the additional  
block. The block erase operation starts the program/erase controller about 50 µs after the  
last bus write operation. Once the program/erase controller starts it is not possible to select  
any more blocks. Each additional block must therefore be selected within 50 µs of the last  
block. The 50 µs timer restarts when an additional block is selected. The status register can  
be read after the sixth bus write operation. See the status register for details on how to  
identify if the program/erase controller has started the block erase operation.  
If any selected blocks are protected then these are ignored and all the other selected blocks  
are erased. If all of the selected blocks are protected the block erase operation appears to  
start but will terminate within about 100 µs, leaving the data unchanged. No error condition  
is given when protected blocks are ignored.  
During the block erase operation the memory will ignore all commands except the Erase  
Suspend command. Typical block erase times are given in Table 6: Program, erase times  
and program, erase endurance cycles. All bus read operations during the block erase  
operation will output the status register on the data inputs/outputs. See the Section 5: Status  
register for more details.  
After the block erase operation has completed the memory will return to the read mode,  
unless an error has occurred. When an error occurs the memory will continue to output the  
status register. A Read/Reset command must be issued to reset the error condition and  
return to read mode.  
The Block Erase command sets all of the bits in the unprotected selected blocks to ’1’. All  
previous data in the selected blocks is lost.  
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