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N25Q128A11BF840F 参数 Datasheet PDF下载

N25Q128A11BF840F图片预览
型号: N25Q128A11BF840F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存存储
文件页数/大小: 185 页 / 5831 K
品牌: NUMONYX [ NUMONYX B.V ]
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Initial delivery state
N25Q128 - 1.8 V
12
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
13
Maximum rating
Stressing the device outside the ratings listed here may cause permanent damage to the
device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 28.
Symbol
T
STG
T
LEAD
V
IO
V
CC
VPP
V
ESD
Storage temperature
Lead temperature during soldering
Input and output voltage (with respect to ground)
Supply voltage
Fast program/erase voltage
(2)
Electrostatic discharge voltage (human body model)
(3)
–0.6
–0.6
–0.2
–2000
Absolute maximum ratings
Parameter
Min
–65
Max
150
see
(1)
V
CC
+ 0.6
4.0
10.0
2000
Unit
°C
°C
V
V
V
V
1. Compliant with JEDEC Std. J-STD-020C (for small body, Sn-Pb or Pb assembly), the Numonyx
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous
Substances (RoHS) 2002/95/EU.
2. Avoid applying VPP
H
to the W/VPP pin during Bulk Erase.
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500
Ω,
R2 = 500
Ω).
170/185