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NAND02GW3B2DZA6F 参数 Datasheet PDF下载

NAND02GW3B2DZA6F图片预览
型号: NAND02GW3B2DZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 2千兆位, 2112字节/ 1056字的页面多平面架构, 1.8 V或3V时, NAND快闪存储器 [2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 69 页 / 1812 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
NAND02G-B2D  
Figure 42. Resistor value versus waveform timings for ready/busy signal  
V
= 3.3 V, C = 100 pF  
V
= 1.8 V, C = 30 pF  
L
DD  
L
DD  
400  
300  
200  
4
3
2
400  
300  
4
3
2
400  
300  
2.4  
200  
1.7  
200  
1.2  
120  
1
90  
100  
0
1
100  
30  
0.8  
3.6  
0.85  
100  
3.6  
0.57  
0.6  
3.6  
0.43  
1.7  
60  
1.7  
3.6  
1.7  
0
1.7  
1
2
3
4
1
2
3
4
R
(K)  
R
(K)  
P
P
t
f
t
r
ibusy  
ai13640b  
1. T = 25 °C.  
11.2  
Data protection  
The Numonyx NAND devices are designed to guarantee data protection during power  
transitions.  
A V detection circuit disables all NAND operations, if V is below the V threshold.  
LKO  
DD  
DD  
In the V range from V  
to the lower limit of nominal range, the WP pin should be kept  
DD  
LKO  
low (V ) to guarantee hardware protection during power transitions as shown in the below  
IL  
figure.  
Figure 43. Data protection  
Nominal range  
V
DD  
V
LKO  
Locked  
Locked  
W
Ai11086  
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