NXP Semiconductors
BT151-500RT
SCR, 12 A, 15 mA, 500 V, SOT78
6. Characteristics
Table 6.
Symbol
dV
D
/dt
Characteristics
Parameter
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
Conditions
V
DM
= 335 V; T
j
= 125 °C; gate open
circuit; see
V
DM
= 335 V; T
j
= 125 °C; R
GK
= 100
Ω
t
gt
t
q
I
TM
= 40 A; V
D
= 500 V; I
G
= 100 mA;
dI
G
/dt = 5 A/µs
V
DM
= 335 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/µs;
dV
D
/dt = 50 V/µs; R
GK
= 100
Ω
V
D
= 12 V; T
j
= 25 °C; I
T
= 100 mA;
V
D
= 12 V; T
j
= 25 °C; I
G
= 100 mA;
T
j
= 25 °C; see
I
T
= 23 A; T
j
= 25 °C; see
I
T
= 100 mA; V
D
= 12 V; T
j
= 25 °C;
I
T
= 100 mA; V
D
= 500 V; T
j
= 125 °C
I
D
I
R
off-state current
reverse current
V
D
= 500 V; T
j
= 125 °C
V
R
= 500 V; T
j
= 125 °C
Min
50
200
-
-
Typ
130
1000
2
70
Max
-
-
-
-
Unit
V/µs
V/µs
µs
µs
Dynamic charateristics
Static characteristics
I
GT
I
L
I
H
V
T
V
GT
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
-
-
-
-
-
0.25
-
-
2
10
7
1.4
0.6
0.4
0.1
0.1
15
40
20
1.75
1.5
-
0.5
0.5
mA
mA
mA
V
V
V
mA
mA
10
4
dV
D
/dt
(V/μs)
10
3
(1)
001aaa949
3
I
GT
I
GT(25°C)
2
003aab824
(2)
10
2
1
10
0
50
100
T
j
(°C)
150
0
−50
0
50
100
T
j
(°C)
150
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Fig 7.
Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
BT151-500RT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 May 2009
6 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
