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2N3906 参数 Datasheet PDF下载

2N3906图片预览
型号: 2N3906
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管开关PC
文件页数/大小: 7 页 / 170 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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2N3906
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
Collector
−Base
Breakdown Voltage
Emitter
−Base
Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
h
FE
60
80
100
60
30
0.65
300
0.25
0.4
0.85
0.95
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 10
mAdc,
I
E
= 0)
(I
E
= 10
mAdc,
I
C
= 0)
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
40
5.0
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
Collector
−Emitter
Saturation Voltage
Base
−Emitter
Saturation Voltage
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
Noise Figure
V
CE(sat)
V
BE(sat)
Vdc
Vdc
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
250
2.0
0.1
100
3.0
4.5
10
12
10
400
60
4.0
MHz
pF
pF
kW
X 10
4
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
ns
ns
2. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2%.
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