MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
COLLECTOR
3
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
PD
R
q
JA
PD
TJ, Tstg
Max
150
833
2.4
– 55 to +150
Unit
mW
°C/W
mW/°C
°C
CASE 419–02, STYLE 3
SOT–323/SC–70
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
Collector – Emitter Breakdown Voltage
(IC = 10
µA,
VEB = 0)
Collector – Base Breakdown Voltage
(IC = 10
m
A)
Emitter – Base Breakdown Voltage
(IE = 1.0
m
A)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
ICBO
nA
µA
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
ONSEMI [ ON SEMICONDUCTOR ]
