BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1
BC847/BC848
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
Cib
TA = 25°C
400
300
200
3.0
Cob
2.0
100
80
60
40
30
20
0.5 0.7
VCE = 10 V
TA = 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0.1 0.2
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0
0.2
0.5
1.0
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
TA = 25°C
1.6
20 mA
1.2
IC =
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.4
–1.8
θ
VB for VBE
–2.2
–55°C to 125°C
0.8
0.4
–2.6
0
–3.0
0.2
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
ONSEMI [ ON SEMICONDUCTOR ]
