CSPEMI201AG
ELECTRICAL OPERATING CHARACTERISTICS
1
SYMBOL
R
C
I
LEAK
V
SIG
PARAMETER
Resistance
Capacitance
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Cut-off frequency
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω
V
IN
=5.0V
I
LOAD
= 10mA
5
-15
Note 2
±15
±8
Notes 2 and 3
+15
-19
R = 10Ω, C = 100pF
31
V
V
MHz
kV
kV
7
-10
15
-5
V
V
CONDITIONS
MIN
9
80
TYP
10
100
MAX
11
120
1.0
UNITS
Ω
pF
μA
V
ESD
V
CL
f
C
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Rev. 3 | Page 5 of 9 | www.onsemi.com
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