MC1496, MC1496B
V
CC
12 Vdc
1.0 k
R
e
= 1.0 k
3.9 k
1.0 k
+V
o
−V
o
V
S
50
50
−8.0 Vdc
V
EE
6.8 k
V
A
+
20 log o
CM
V
S
8
+ − 10
1
4
0.5 V
1.0 k
2
MC1496
14
I5 =
1.0 mA
−8.0 Vdc
V
EE
5
6.8 k
R
e
= 1.0 k
3
3.9 k
3.9 k
+V
o
−V
o
3.9 k
3
0.5 V 8 2
+ − 10
1
MC1496
6
4
12
14
5
V
CC
12 Vdc
1.0 k
V
S
6
12
Figure 9. Common Mode Gain
Figure 10. Signal Gain and Output Swing
TYPICAL CHARACTERISTICS
VO , OUTPUT AMPLITUDE OF EACH SIDEBAND (Vrms)
Typical characteristics were obtained with circuit shown in Figure 5, f
C
= 500 kHz (sine wave),
V
C
= 60 mVrms, f
S
= 1.0 kHz, V
S
= 300 mVrms, T
A
= 25°C, unless otherwise noted.
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
V
C
, CARRIER LEVEL (mVrms)
200
Signal Input = 600 mV
400 mV
300 mV
200 mV
100 mV
1.0 M
r ip, PARALLEL INPUT RESISTANCE (k
Ω)
500
+r
ip
100
50
−r
ip
10
5.0
1.0
1.0
5.0
10
f, FREQUENCY (MHz)
50
100
Figure 11. Sideband Output versus
Carrier Levels
cip , PARALLEL INPUT CAPACITANCE (pF)
Figure 12. Signal−Port Parallel−Equivalent
Input Resistance versus Frequency
cop, PARALLEL OUTPUT CAPACITANCE (pF)
rop , PARALLEL OUTPUT RESISTANCE (k
Ω)
5.0
4.0
3.0
2.0
1.0
0
1.0
140
120
100
80
60
40
20
0
0
1.0
10
f, FREQUENCY (MHz)
c
op
r
op
14
12
10
8.0
6.0
4.0
2.0
0
100
2.0
20
10
5.0
f, FREQUENCY (MHz)
50
100
Figure 13. Signal−Port Parallel−Equivalent
Input Capacitance versus Frequency
Figure 14. Single−Ended Output Impedance
versus Frequency
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