欢迎访问ic37.com |
会员登录 免费注册
发布采购

MMBT4403LT1 参数 Datasheet PDF下载

MMBT4403LT1图片预览
型号: MMBT4403LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 开关晶体管( PNP硅) [Switching Transistor(PNP Silicon)]
分类和应用: 晶体开关小信号双极晶体管
文件页数/大小: 8 页 / 150 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号MMBT4403LT1的Datasheet PDF文件第1页浏览型号MMBT4403LT1的Datasheet PDF文件第3页浏览型号MMBT4403LT1的Datasheet PDF文件第4页浏览型号MMBT4403LT1的Datasheet PDF文件第5页浏览型号MMBT4403LT1的Datasheet PDF文件第6页浏览型号MMBT4403LT1的Datasheet PDF文件第7页浏览型号MMBT4403LT1的Datasheet PDF文件第8页  
MMBT4403LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
Base Cutoff Current
(V
CE
= −35 Vdc, V
EB
= −0.4 Vdc)
Collector Cutoff Current
(V
CE
= −35 Vdc, V
EB
= −0.4 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −150 mAdc, V
CE
= −2.0 Vdc) (Note 3)
(I
C
= −500 mAdc, V
CE
= −2.0 Vdc) (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I
C
= −20 mAdc, V
CE
= −10 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Emitter−Base Capacitance
(V
BE
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= −30 Vdc, V
EB
= −2.0 Vdc,
30
2.0
I
C
= −150 mAdc, I
B1
= −15 mAdc)
(V
CC
= −30 Vdc, I
C
= −150 mAdc,
30
150
I
B1
= I
B2
= −15 mAdc)
t
d
t
r
t
s
t
f
15
20
225
30
ns
ns
f
T
200
C
cb
C
eb
h
ie
1.5
h
re
0.1
h
fe
60
h
oe
1.0
100
500
mmhos
8.0
15
X 10
− 4
30
kW
8.5
pF
pF
MHz
h
FE
30
60
100
100
20
V
CE(sat)
V
BE(sat)
−0.75
−0.95
−1.3
−0.4
−0.75
Vdc
300
V
(BR)CEO
−40
V
(BR)CBO
−40
V
(BR)EBO
−5.0
I
BEV
I
CEX
−0.1
−0.1
mAdc
mAdc
Vdc
Vdc
Vdc
Symbol
Min
Max
Unit
Vdc
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
http://onsemi.com
2